Fabrication and Investigation of High Efficiency Evanescently Coupled Uni-Traveling Carrier Photodiodes

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Fabrication and Investigation of High Efficiency Evanescently Coupled Uni-Traveling Carrier Photodiodes
	Zhang YX; Liao ZY; Sun Y; Chen WX; Zhao LJ; Zhu HL; Wang W; Zhang, YX, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
	2008
会议名称	IEEE PhotonicsGlobal at Singapore
会议录名称	2008 IEEE PHOTONICSGLOBAL@SINGAPORE (IPGC)
页码	VOLS 1 AND 2: 685-687
会议日期	DEC 08-11, 2008
会议地点	Singapore, SINGAPORE
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-3901-0
部门归属	[zhang, y. x.; liao, z. y.; sun, y.; chen, w. x.; zhao, l. j.; zhu, h. l.; wang, w.] chinese acad sci, key lab semicond mat sci, inst semicond, beijing 100083, peoples r china
摘要	In this paper, an evanescently coupled uni-traveling carrier photodiodes (EC-UTC-PDs) have been fabricated and investigated, which can benefit from the incorporation of a multimode diluted waveguide of appropriate length with experiment-simulation comparison. A high responsibvity of 0.68 A/W at 1.55-mu m without an anti-reflection coating, -1 dB compression current of more than 19 mA, and a large -1 dB vertical alignment tolerance of 2.2 mu m were achieved.
关键词	Optimization
学科领域	光电子学
主办者	IEEE.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8264
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang, YX, Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zhang YX,Liao ZY,Sun Y,et al. Fabrication and Investigation of High Efficiency Evanescently Coupled Uni-Traveling Carrier Photodiodes[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1 AND 2: 685-687.

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