High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
	Zhang, Y; Yan, FW; Gao, HY; Li, JM; Zeng, YP; Wang, GH; Yang, FH; Zhang, Y, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
	2008
会议名称	Conference on Solid State Lighting and Solar Energy Technologies
会议录名称	SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES
页码	6841: T8410-T8410
会议日期	NOV 12-14, 2007
会议地点	Beijing, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	978-0-8194-7016-4
部门归属	[zhang, yang; yan, fawang; gao, haiyong; li, jinmin; zeng, yiping; wang, guohong; yang, fuhua] chinese acad sci, inst semicond, semicond lighting technol res & dev ctr, beijing 100083, peoples r china
摘要	Patterning sapphire substrate can relax the stress in the nitride epilayer, reduce the threading dislocation density, and significantly improve device performance. In this article, a wet-etching method for sapphire substrate is developed. The effect of substrate surface topographies on the quality of the GaN epilayers and corresponding device performance are investigated. The GaN epilayers grown on the wet-patterned sapphire substrates by MOCVD are characterized by means of scanning electrical microscopy (SEM), atomic force microscopy (AFM), high-resolution x-ray diffraction (HRXRD), and photoluminescence (PL) techniques. In comparison with the planar sapphire substrate, about a 22% increase in device performance with light output power of 13.31 mW@20mA is measured for the InGaN/GaN blue LEDs grown on the wet-patterned sapphire substrate.
关键词	Gan Nitrides Led Mocvd Patterned Sapphire Substrate Wet Etching
学科领域	光电子学
主办者	SPIE.; Chinese Opt Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7832
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang, Y, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, Y,Yan, FW,Gao, HY,et al. High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2008:6841: T8410-T8410.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
696.pdf（929KB）			限制开放	--	请求全文