中国科学院半导体研究所机构知识库(SEMI OpenIR): 集成光电子学国家重点实验室

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Fe和Ni共掺杂GaSb磁性半导体分子束处延生长及相关器件研制 [学位论文, 2024-05]
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On-chip four-mode (de-)multiplexer on thin film lithium niobate-silicon rich nitri.. [期刊论文, 2022-07]
Yellow emissive nitrogen-doped graphene quantum dots as a label-free fluorescent p.. [期刊论文, 2021-12]
Interface Engineering-Assisted 3D-Graphene/Germanium Heterojunction for High-Perfo.. [期刊论文, 2021-12]
Instantaneous microwave frequency measurement based on non-sliced broadband optica.. [期刊论文, 2021-12]
Investigation on Low-temperature Annealing Process of Solution-processed TiO2 Elec.. [期刊论文, 2021-11]
Fabrication of high quantum efficiency p-i-n AlGaN detector and optimization of p-.. [期刊论文, 2021-05]
A novel low sintering temperature scheelite-structured CaBiVMoO8 microwave dielect.. [期刊论文, 2021-05]

1. High-speed analog DFB laser module operated in direct modulation for Ku-band

[2742]

2. Investigation on the strain relaxation of InGaN layer and its effects on the InGaN..

[1469]

3. 下一代测序技术:技术回顾与展望

[1072]

4. High speed silicon Mach-Zehnder modulator based on interleaved PN junctions

[870]

5. Harmonic RF carrier generation and broadband data upconversion using stimulated Br..

[794]

6. GeSn p-i-n photodetector for all telecommunication bands detection

[762]

7. Structural and electronic properties of Si nanocrystals embedded in amorphous SiC ..

[753]

8. High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drai..

[704]

9. Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN

[678]

10. Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitr..

[662]

1. 耦合腔激光器与光注入微腔激光器特性研究

[1]

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