Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices

	Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices
	Jin P (Jin P.); Lv XQ (Lv X. Q.); Liu N (Liu N.); Zhang ZY (Zhang Z. Y.); Wang ZG (Wang Z. G.); Wang, ZG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: [email protected]
	2010
会议名称	3rd IEEE International Nanoelectronics Conference
会议录名称	NEC: 2010 3RD INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1 AND 2
页码	304-305
会议日期	JAN 03-08, 2010
会议地点	Hong Kong, PEOPLES R CHINA
合作性质	其它
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-3543-2
摘要	Self-assembled quantum dots (QDs) with broadband emitting spectra, QD superluminescent diodes (SLDs) and external cavity tunable QD laser have been studied. By optimizing growth parameters and sample structure of In As QDs, up to 150-nm photoluminescence width is achieved. High-power In As/GaAs QD-SLDs with the CW output power of 200 mW and the spectral bandwidth of near 60 nm have been obtained at room temperature. In addition, broadband emitting In As/GaAs QD-SLDs are fabricated. The device exhibits properties of 110 nm bandwidth with the centre of 1.1 mu m and above 30 mW output under pulsing injection at room temperature. By using InAs/AlGaAs QDs as active layers, we get SLDs with 142 nm spectral width. Broadband external cavity tunable laser has been constructed by using broad-emitting spectral In As/GaAs QD gain device. Leaving the facets uncoated, a tuning range of 110 nm, which covers the ground state and the first excited state of the QDs, is realized. By the anti-reflectance coating on one facet, which is coupled with the grating, the tuning bandwidth is expanded to near 150 nm. The ground state, the first and second excited states of the QDs contribute to the broad tuning range.
关键词	Superluminescent Diodes
学科领域	半导体材料
主办者	City Univ Hong Kong
收录类别	CPCI（ISTP）
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13897
专题	中科院半导体材料科学重点实验室
通讯作者	Wang, ZG, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China. 电子邮箱地址: [email protected]
推荐引用方式 GB/T 7714	Jin P ,Lv XQ ,Liu N ,et al. Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2010:304-305.

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