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无权访问的条目 期刊论文
作者:  Hu, Qiang;  Wei, Tongbo;  Duan, Ruifei;  Yang, Jiankun;  Huo, Ziqiang;  Zeng, Yiping;  Xu, Shu;  Hu, Q.([email protected])
Adobe PDF(594Kb)  |  收藏  |  浏览/下载:1288/391  |  提交时间:2012/06/14
无权访问的条目 期刊论文
作者:  Zhang, Yu;  Wang, Guowei;  Tang, Bao;  Xu, Yingqiang;  Xu, Yun;  Song, Guofeng;  Xu, Y.([email protected])
Adobe PDF(1570Kb)  |  收藏  |  浏览/下载:887/137  |  提交时间:2012/06/14
无权访问的条目 期刊论文
作者:  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Wang BQ (Wang B. Q.);  Zhu ZP (Zhu Z. P.);  Cui, LJ, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Beijing 100083, Peoples R China. E-mail: [email protected]
Adobe PDF(116Kb)  |  收藏  |  浏览/下载:1119/313  |  提交时间:2010/04/11
无权访问的条目 期刊论文
作者:  Liu JQ;  Liu FQ;  Lu XZ;  Guo Y;  Wang ZG;  Liu, FQ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. E-mail: [email protected]
Adobe PDF(237Kb)  |  收藏  |  浏览/下载:1126/431  |  提交时间:2010/04/11
Study of infrared luminescence from Er-implanted GaN films 会议论文
JOURNAL OF CRYSTAL GROWTH, 268 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Chen WD;  Song SF;  Zhu JJ;  Wang XL;  Chen CY;  Hsu CC;  Chen WD Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: [email protected]
Adobe PDF(219Kb)  |  收藏  |  浏览/下载:1446/325  |  提交时间:2010/11/15
Doping  Metalorganic Chemical Vapor Deposition  Molecular Beam Epitaxy  Gallium Compounds  Semiconducting Gallium Compounds  Erbium  
High-quality GaN grown by gas-source MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Wang JX;  Sun DZ;  Wang XL;  Li JM;  Zeng YP;  Hou X;  Lin LY;  Wang JX Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(103Kb)  |  收藏  |  浏览/下载:1895/464  |  提交时间:2010/11/15
Characterization  Molecular Beam Epitaxy  Gallium Compounds  Nitrides  Piezoelectric Materials  Semiconducting Gallium Compounds  Molecular-beam Epitaxy  Heterostructures  Sapphire  Diodes  
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Zheng LX;  Xie MH;  Xu SJ;  Cheung SH;  Tong SY;  Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(193Kb)  |  收藏  |  浏览/下载:1381/243  |  提交时间:2010/11/15
Surface Processes  Molecular Beam Epitaxy  Nitrides  Semiconducting Gallium Compounds  Gan(0001) Surfaces  Reconstructions  
无权访问的条目 期刊论文
作者:  Wang JX;  Sun DZ;  Wang XL;  Li JM;  Zeng YP;  Hou X;  Lin LY;  Wang JX,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(103Kb)  |  收藏  |  浏览/下载:956/276  |  提交时间:2010/08/12
无权访问的条目 期刊论文
作者:  Zheng LX;  Xie MH;  Xu SJ;  Cheung SH;  Tong SY;  Xie MH,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
Adobe PDF(193Kb)  |  收藏  |  浏览/下载:967/314  |  提交时间:2010/08/12