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无权访问的条目 期刊论文
作者:  Wei, TB;  Chen, Y;  Hu, Q;  Yang, JK;  Huo, ZQ;  Duan, RF;  Wang, JX;  Zeng, YP;  Li, JM;  Liao, YX;  Yin, FT
Adobe PDF(640Kb)  |  收藏  |  浏览/下载：1135/357  |  提交时间：2013/03/17
无权访问的条目 期刊论文
作者:  屈盛;  张兴旺;  毛和璜;  余银祥;  韩增华;  汤叶华;  周春兰;  王文静
Adobe PDF(290Kb)  |  收藏  |  浏览/下载：1067/331  |  提交时间：2012/07/17
无权访问的条目 期刊论文
作者:  Wei TB;  Kong QF;  Wang JX;  Li J;  Zeng YP;  Wang GH;  Li JM;  Liao YX;  Yi FT;  Wei, TB, Chinese Acad Sci, Inst Semicond, Semicond Lighting Technol Res & Dev Ctr, Beijing 100083, Peoples R China. [email protected]
Adobe PDF(996Kb)  |  收藏  |  浏览/下载：2869/1019  |  提交时间：2011/07/05
Optical and electrical investigation of low dimensional self-assembled InAs quantum dot field effect transistors 会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:  Zeng, YX (Zeng, Yuxin);  Liu, W (Liu, Wei);  Yang, FH (Yang, Fuhua);  Xu, P (Xu, Ping);  Tan, PH (Tan, Pingheng);  Zheng, HZ (Zheng, Houzhi);  Zeng, YP (Zeng, Yiping);  Xing, YJ (Xing, Yingjie);  Yu, DP (Yu, Dapeng);  Zeng, YX, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China.
Adobe PDF(561Kb)  |  收藏  |  浏览/下载：1805/264  |  提交时间：2010/03/29
Inas Quantum Dot  Photoluminescence  Modulation-doped  Field Effect Transistor  Mu-m  Capping Layer  
无权访问的条目 期刊论文
作者:  Zhang H;  Zheng HZ;  Xu P;  Peng HL;  Tan PH;  Yang FH;  Ni HQ;  Zeng YX;  Gan HD;  Zhu H;  Zhang, H, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: [email protected]
Adobe PDF(237Kb)  |  收藏  |  浏览/下载：950/277  |  提交时间：2010/03/17
无权访问的条目 期刊论文
作者:  Xin G;  Sun, GS;  Li JM;  Zhang YX;  Lei W;  Zhao WS;  Zeng YP;  Xin, G, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: [email protected]
Adobe PDF(274Kb)  |  收藏  |  浏览/下载：938/282  |  提交时间：2010/03/17
High performance resonant tunneling diode on a new material structure 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Wang JL;  Liu ZL;  Wang LC;  Zeng YP;  Yang FH;  Bai YX;  Wang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(535Kb)  |  收藏  |  浏览/下载：1465/245  |  提交时间：2010/03/29
Resonant Tunneling Diode  
无权访问的条目 期刊论文
作者:  Zhu, L;  Zheng, HZ;  Tan, PH;  Zhou, X;  Ji, Y;  Yang, FH;  Li, GR;  Zeng, YX;  Zhu, L, Sichuan Univ, Coll Phys Sci & Technol, Chengdu 610064, Peoples R China. 电子邮箱地址: [email protected]
Adobe PDF(291Kb)  |  收藏  |  浏览/下载：843/256  |  提交时间：2010/03/17
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Sun, GS;  Ning, J;  Zhang, YX;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM;  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(201Kb)  |  收藏  |  浏览/下载：1632/208  |  提交时间：2010/03/29
4h-sic  Lpcvd Homoepitaxial Growth  Thermal Oxidization  Mos Structures  Hot-wall Cvd  
无权访问的条目 期刊论文
作者:  Sun, GS;  Zhang, YX;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: [email protected]
Adobe PDF(357Kb)  |  收藏  |  浏览/下载：919/289  |  提交时间：2010/03/17