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无权访问的条目 期刊论文
作者:  Yang, CB;  Wang, XL;  Xiao, HL;  Zhang, XB;  Hua, GX;  Ran, JX;  Wang, CM;  Li, JP;  Li, JM;  Wang, ZG;  Yang, CB, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Jia 35,Qinghua Dong Rd,POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: [email protected]
Adobe PDF(534Kb)  |  收藏  |  浏览/下载：1193/394  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Lin, GQ;  Zeng, YP;  Wang, XL;  Liu, HX;  Lin, GQ, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: [email protected]
Adobe PDF(642Kb)  |  收藏  |  浏览/下载：1209/276  |  提交时间：2010/03/08
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:  Wang, XH;  Wang, XL;  Xiao, HL;  Feng, C;  Wang, XY;  Wang, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)  |  收藏  |  浏览/下载：2082/329  |  提交时间：2010/03/09
Gas Sensors  Hemt Structures  Mobility  Temperature  Transistors  Growth  Mocvd  Layer  
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:  Tang, J;  Wang, XL;  Xiao, HL;  Ran, JX;  Wang, CM;  Wang, XY;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)  |  收藏  |  浏览/下载：2211/451  |  提交时间：2010/03/09
Performance  Heterostructures  Optimization  Mobility  
Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R 会议论文
ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wang, XH;  Wan, XL;  Xiao, HL;  Feng, C;  Way, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wan, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(339Kb)  |  收藏  |  浏览/下载：1814/523  |  提交时间：2010/03/09
Hydrogen Sensor  Algan/gan Heterostructure  Schottky Diode  
无权访问的条目 期刊论文
作者:  Yang, CB;  Wang, XL;  Xiao, HL;  Ran, JX;  Wang, CM;  Hu, GX;  Wang, XH;  Zhang, XB;  Li, MP;  Li, JM;  Yang, CB, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: [email protected]
Adobe PDF(234Kb)  |  收藏  |  浏览/下载：1381/448  |  提交时间：2010/03/08
无权访问的条目 期刊论文
作者:  Luo MC;  Wang XL;  Li JM;  Liu HX;  Wang L;  Sun DZ;  Zeng YP;  Lin LY;  Luo MC,Chinese Acad Sci,Inst Semicond,Novel Semicond Mat Lab,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(249Kb)  |  收藏  |  浏览/下载：1250/571  |  提交时间：2010/08/12