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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研... [14]
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A silicon capacitive microphone based on oxidized porous silicon sacrificial technology
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Ning, J
;
Liu, ZL
;
Liu, HZ
;
Ge, YC
;
Ning, J, Chinese Acad Sci, Microelect R&D Ctr, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(151Kb)
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收藏
  |  
浏览/下载:1217/186
  |  
提交时间:2010/03/29
Silicon Capacitive Microphone
Oxidized Porous Silicon
Sacrificial Layer
Structural optimizations of SOI-based single-mode rib waveguide bends
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Chen, YY
;
Yan, QF
;
Yang, D
;
Chen, SW
;
Yu, JZ
;
Chen, YY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(138Kb)
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  |  
浏览/下载:1332/216
  |  
提交时间:2010/03/29
Silicon-on-insulator
Bend Waveguide
Bend Loss
Integrated Optics
Silicon-on-insulator
The effect of Fabry-Perot interference on the packaging of SOI-based optoelectronic devices
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Xin HL
;
Chen P
;
Li F
;
Wang CX
;
Cao P
;
Liu YL
;
Xin, HL, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(142Kb)
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浏览/下载:1481/255
  |  
提交时间:2010/03/29
Electronic states of InAs verfically-assembled quantum disks in magnetic fields and two-electron quantum-disk qubit
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Dong, QR
;
Niu, ZC
;
Dong, QR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(608Kb)
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收藏
  |  
浏览/下载:1145/157
  |  
提交时间:2010/03/29
Dots
High performance resonant tunneling diode on a new material structure
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Wang JL
;
Liu ZL
;
Wang LC
;
Zeng YP
;
Yang FH
;
Bai YX
;
Wang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(535Kb)
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收藏
  |  
浏览/下载:1477/245
  |  
提交时间:2010/03/29
Resonant Tunneling Diode
A low power consumption thermo-optic variable optical attenuator based on SOI material
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Fang, Q
;
Li, F
;
Wang, CX
;
Xin, HL
;
Liu, YL
;
Fang, Q, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(138Kb)
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收藏
  |  
浏览/下载:1263/240
  |  
提交时间:2010/03/29
Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Zheng, ZS
;
Liu, ZL
;
Zhang, GQ
;
Li, N
;
Fan, K
;
Zheng, ZS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(519Kb)
  |  
收藏
  |  
浏览/下载:1488/244
  |  
提交时间:2010/03/29
The status, limits and countermeasures in the development of the silicon microelectronics industry
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Liu, ZL
;
Liu, ZL, Chinese Acad Sci, Inst Semicond, Microelect R&D Ctr, Beijing 100083, Peoples R China.
Adobe PDF(530Kb)
  |  
收藏
  |  
浏览/下载:1229/149
  |  
提交时间:2010/03/29
Silicon Microelectronics
Cmos
Theoretic Limit
Technologic Limit
Economic Limit
Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Wang, QY
;
Shen, WJ
;
Wang, J
;
Wang, JH
;
Zeng, YP
;
Li, JM
;
Wang, QY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(175Kb)
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收藏
  |  
浏览/下载:1436/210
  |  
提交时间:2010/03/29
Ultraviolet-laser Emission
Thin-films
Zinc-oxide
Room-temperature
Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers
会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:
Li, N
;
Zhang, GQ
;
Liu, ZL
;
Fan, K
;
Zheng, ZS
;
Lin, Q
;
Zhang, ZX
;
Lin, CL
;
Li, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)
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浏览/下载:1828/231
  |  
提交时间:2010/03/29
Simox
Fluorine
Ionizing Radiation