Dipole mode photonic crystal point defect laser on InGaAsP/InP

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Dipole mode photonic crystal point defect laser on InGaAsP/InP
	Zheng WH; Ren G; Ma XT; Cai XH; Chen LH; Nozaki K; Baba T; Zheng, WH, Chinese Acad Sci, Inst Semicond, Nano Optoelect Lab, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: [email protected]
	2006
会议名称	3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3)
会议录名称	JOURNAL OF CRYSTAL GROWTH
页码	292 (2): 341-344
会议日期	OCT 16-19, 2005
会议地点	Beijing, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, nano optoelect lab, beijing 100083, peoples r china; yokohama natl univ, dept elect & comp engn, hodogayaku, yokohama, kanagawa 2408501, japan
摘要	In this paper, we focus on the dipole mode of the two-dimensional (2D) photonic crystal (PC) single point defect cavity (SPDC) lasers and we report the fabrication and characterization of 2D PC SPDC lasers with the structure of adjusted innermost air holes. The photonic band and cavity Q factors are simulated by means of plane wave expansion (PWE) and finite-difference time-domain (FDTD), respectively. In order to improve the optical confinement of the SPDC, the diameter of the innermost holes was adjusted. Different lasing performances are observed experimentally. The experimental results agree with the theoretical prediction very well. (c) 2006 Elsevier B.V. All rights reserved.
关键词	Dipole Mode
学科领域	光电子学
主办者	Chinese Assoc Crystal Growth.; Crystal Mat Shandong Univ, State Key Lab.; CAS, Tech Inst Phys & Chem.; Res Inst Synthet Crystal.; Japanese Soc Promot Sci, 161 Comm.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9988
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zheng, WH, Chinese Acad Sci, Inst Semicond, Nano Optoelect Lab, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: [email protected]
推荐引用方式 GB/T 7714	Zheng WH,Ren G,Ma XT,et al. Dipole mode photonic crystal point defect laser on InGaAsP/InP[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:292 (2): 341-344.

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