Silicon thin films prepared in the transition region and their use in solar cells

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Silicon thin films prepared in the transition region and their use in solar cells
	Zhang S; Liao X; Raniero L; Fortunato E; Xu Y; Kong G; Aguas H; Ferreira I; Martins R; Zhang, S, New Univ Lisbon, Fac Sci & Technol, CENIMAT, Dept Mat Sci, P-2829516 Caparica, Portugal. 电子邮箱地址: [email protected]
	2006
会议名称	14th International Photovoltaic Science and Engineering Conference
会议录名称	SOLAR ENERGY MATERIALS AND SOLAR CELLS
页码	90 (18-19): 3001-3008
会议日期	JAN 27-FEB 01, 2004
会议地点	Bangkok, THAILAND
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0927-0248
部门归属	new univ lisbon, fac sci & technol, cenimat, dept mat sci, p-2829516 caparica, portugal; uninova, cemop, p-2829516 caparica, portugal; chinese acad sci, inst semicond, state key surface phys, beijing 100083, peoples r china; chinese acad sci, ctr condensed matter phys, beijing 100083, peoples r china
摘要	Diphasic silicon films (nc-Si/a-Si:H) have been prepared by a new regime of plasma enhanced chemical vapour deposition in the region adjacent of phase transition from amorphous to microcrystalline state. Comparing to the conventional amorphous silicon (a-Si:H), the nc-Si/a-Si:H has higher photoconductivity (sigma(ph)), better stability, and a broader light spectral response range in the longer wavelength range. It can be found from Raman spectra that there is a notable improvement in the medium range order. The blue shift for the stretching mode and red shift for the wagging mode in the IR spectra also show the variation of the microstructure. By using this kind of film as intrinsic layer, a p-i-n junction solar cell was prepared with the initial efficiency of 8.51 % and a stabilized efficiency of 8.01% (AM 1.5, 100 mw/cm(2)) at room temperature. (c) 2006 Published by Elsevier B.V.
关键词	Silicon
学科领域	半导体材料
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9982
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang, S, New Univ Lisbon, Fac Sci & Technol, CENIMAT, Dept Mat Sci, P-2829516 Caparica, Portugal. 电子邮箱地址: [email protected]
推荐引用方式 GB/T 7714	Zhang S,Liao X,Raniero L,et al. Silicon thin films prepared in the transition region and their use in solar cells[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:90 (18-19): 3001-3008.

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