Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
	Zhao, YM; Sun, GS; Liu, XF; Li, JY; Zhao, WS; Wang, L; Li, JM; Zeng, YP; Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
	2009
会议名称	International Conference on Silicon Carbide and Related Materials
会议录名称	SILICON CARBIDE AND RELATED MATERIALS 2007
页码	PTS 1 AND 2,600-603,: 251-254 Part 1-2
会议日期	OCT 14-19, 2007
会议地点	Otsu, JAPAN
出版地	LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISSN	0255-5476
部门归属	[zhao, y. m.; sun, g. s.; liu, x. f.; li, j. y.; zhao, w. s.; wang, l.; li, j. m.; zeng, y. p.] chinese acad sci, inst semicond, novel semicond mat lab, beijing 100083, peoples r china
摘要	Using AlN as a buffer layer, 3C-SiC film has been grown on Si substrate by low pressure chemical vapor deposition (LPCVD). Firstly growth of AlN thin films on Si substrates under varied V/III ratios at 1100 degrees was investigated and the (002) preferred orientational growth with good crystallinity was obtained at the V/III ratio of 10000. Annealing at 1300 degrees C indicated the surface morphology and crystallinity stability of AlN film. Secondly the 3C-SiC film was grown on Si substrate with AlN buffer layer. Compared to that without AlN buffer layer, the crystal quality of the 3C-SiC film was improved on the AlN/Si substrate, characterized by X-ray diffraction (XRD) and Raman measurements.
关键词	Silicon Carbide Aluminum Nitride Buffer Layer Lpcvd
学科领域	半导体材料
主办者	Japan Soc Appl phys.; Assoc Promot Elect, Elect & Informat Engn.; Ceram Soc Japan.; IEEE EDS, Kansai Chapter.; IEEJ.; Inst Elect, Informat & Commun Engineers.; Japanese Assoc Crystal Growth.; Surface Sci Soc Japan.; Vacuum Soc Japan.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8336
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao, YM, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Zhao, YM,Sun, GS,Liu, XF,et al. Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer[C]. LAUBLSRUTISTR 24, CH-8717 STAFA-ZURICH, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2009:PTS 1 AND 2,600-603,: 251-254 Part 1-2.

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