Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing
	Wang XD; Li GK; Liang JR; Ji A; Hu M; Yang FH; Liu J; Wu NJ; Chen HD; Wang, XD, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.
	2008
会议名称	2nd IEEE International Nanoelectronics Conference
会议录名称	2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE
页码	VOLS 1-3: 857-859
会议日期	MAR 24-27, 2008
会议地点	Shanghai, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-1572-4
部门归属	[wang, xiaodong; ji, an; yang, fuhua] chinese acad sci, inst semicond, engn res ctr semicond integrated technol, beijing 100083, peoples r china
摘要	VOx thin films have been fabricated by low temperature ion beam sputtering and post reductive annealing process. Semiconductor-metal phase transition is observed for the film annealed at 400 degrees C for 2 hours. The film also shows a polycrystal structure with grain size from 50nm to 150nm. The VOx thin films fabricated by this process have a TCR up to -2.7% at room temperature. Our results indicate a promising fabrication method of the nano-structured VOx film with relatively high TCR and semiconductor-metal phase transition.
关键词	V2o5 Thin-films
学科领域	微电子学
主办者	IEEE.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7754
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang, XD, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wang XD,Li GK,Liang JR,et al. Fabrication of Nano-structured VOx Film by Low Temperature Ion Beam Sputtering and Reductive Annealing[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-3: 857-859.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
649.pdf（706KB）			限制开放	--	请求全文