Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix
	Chen YH; Yang Z; Wang ZG; Xu B; Liang JB; Qian JJ; Chen YH Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong.
	1998
会议名称	6th International Conference on the Formation of Semiconductor Interfaces (ICFSI-6)
会议录名称	APPLIED SURFACE SCIENCE, 123
页码	343-346
会议日期	JUN 23-27, 1997
会议地点	CARDIFF, WALES
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0169-4332
部门归属	hong kong univ sci & technol, dept phys, kowloon, hong kong; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	The steplike density of states obtained from reflectance-difference spectroscopy demonstrates that ultrathin InAs layers should be regarded as two-dimensional quantum wells rather than isolated clusters, even for the sample with only 1/3 monolayer InAs in (311)-oriented GaAs. The degree of anisotropy is within the intrinsic anisotropy of (311)-oriented ultrathin quantum wells, indicating that there is little structural or strain anisotropy in the InAs islands. (C) 1998 Elsevier Science B.V.
关键词	Znse/gaas Interface States
学科领域	半导体材料
主办者	British Assoc Crystal Growth.; British Tourist Author.; Inst Phys.; Wales Tourist Board.; Welsh Dev Agcy.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15097
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen YH Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong.
推荐引用方式 GB/T 7714	Chen YH,Yang Z,Wang ZG,et al. Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1998:343-346.

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