Formation and magnetic properties of Fe16N2 films prepared by ion-beam-assisted deposition

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Formation and magnetic properties of Fe16N2 films prepared by ion-beam-assisted deposition
	Yao ZY; Jiang H; Liu ZK; Huang DD; Qin FG; Zhu SC; Sun YX; Zhu SC Peking Univ Dept Phys Beijing 100871 Peoples R China.
	1998
会议名称	International Conference on Magnetism
会议录名称	JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 177
页码	1291-1292
会议日期	JUL 27-AUG 01, 1997
会议地点	CAIRNS, AUSTRALIA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0304-8853
部门归属	peking univ, dept phys, beijing 100871, peoples r china; chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Fe-N films containing the Fe16N2 phase were prepared in a high-vacuum system of ion-beam-assisted deposition (IBAD). The composition and structure of the films were analysed by Auger electron spectroscopy (AES) and X-ray diffraction (XRD), respectively. Magnetic properties of the films were measured by a vibrating sample magnetometer (VSM). The phase composition of Fe-N films depend sensitively on the N/Fe atomic arrival ratio and the deposition temperature. An Fe16N2 film was deposited successfully on a GaAs (1 0 0) substrate by IBAD at a N/Fe atomic arrival ratio of 0.12. The gram-saturation magnetic moment of the Fe16N2 film obtained is 237 emu/g at room temperature, the possible cause has been analysed and discussed. Hysteresis loops of Fe16N2 have been measured, the coercive force H-c is about 120 Oe, which is much larger than the value for Fe, this means the Fe16N2 sample exhibits a large uniaxial magnetocrystalline anisotropy. (C) 1998 Elsevier Science B.V. All rights reserved.
关键词	Thin Films Saturation Magnetization Uniaxial Anisotropy
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15095
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhu SC Peking Univ Dept Phys Beijing 100871 Peoples R China.
推荐引用方式 GB/T 7714	Yao ZY,Jiang H,Liu ZK,et al. Formation and magnetic properties of Fe16N2 films prepared by ion-beam-assisted deposition[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1998:1291-1292.

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