Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

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	Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers
	Peng CS; Chen H; Zhao ZY; Li JH; Dai DY; Huang Q; Zhou JM; Zhang YH; Tung CH; Sheng TT; Wang J; Peng CS Chinese Acad Sci Inst Phys POB 603 Beijing 100080 Peoples R China.
	1999
会议名称	10th International Conference on Molecular Beam Epitaxy (MBE-X)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 201
页码	530-533
会议日期	AUG 31-SEP 04, 1998
会议地点	CANNES, FRANCE
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst phys, beijing 100080, peoples r china; chinese acad sci, ctr condensed matter phys, beijing 100080, peoples r china; chinese acad sci, inst semicond, beijing 100083, peoples r china; inst microelect, singapore, singapore
摘要	We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved.
关键词	Threading Dislocation Si(100) Layers Films
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15031
专题	中国科学院半导体研究所（2009年前）
通讯作者	Peng CS Chinese Acad Sci Inst Phys POB 603 Beijing 100080 Peoples R China.
推荐引用方式 GB/T 7714	Peng CS,Chen H,Zhao ZY,et al. Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1999:530-533.

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