In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD
	Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY; Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	2002
会议名称	International Conference on Silicon Carbide and Related Materials
会议录名称	SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 389-3
页码	339-342
会议日期	OCT 28-NOV 02, 2001
会议地点	TSUKUBA, JAPAN
出版地	BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND
出版者	TRANS TECH PUBLICATIONS LTD
ISSN	0255-5476
ISBN	0-87849-894-X
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	The heteroepitaxial growth of n-type and p-type 3C-SiC on (0001) sapphire substrates has been performed with a supply of SiH4+C2H4+H-2 system by introducing ammonia (NH3) and diborane (B2H6) precursors, respectively, into gas mixtures. Intentionally incorporated nitrogen impurity levels were affected by changing the Si/C ratio within the growth reactor. As an acceptor, boron can be added uniformly into the growing 3C-SiC epilayers. Nitrogen-doped 3C-SiC epilayers were n-type conduction, and boron-doped epilayers were p-type and probably heavily compensated.
关键词	3c-sic In-situ Doping Low-pressure Cvd Sapphire Substrate Chemical-vapor-deposition Competition Epitaxy
学科领域	半导体材料
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收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14889
专题	中国科学院半导体研究所（2009年前）
通讯作者	Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Sun GS,Luo MC,Wang L,et al. In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD[C]. BRANDRAIN 6, CH-8707 ZURICH-UETIKON, SWITZERLAND:TRANS TECH PUBLICATIONS LTD,2002:339-342.

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