Optical study on the coupled GaAsSb/GaAs double quantum wells

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Optical study on the coupled GaAsSb/GaAs double quantum wells
	Jiang DS; Liang XG; Chang K; Bian LF; Sun BQ; Wang JB; Johnson S; Zhang Y; Jiang DS Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China.
	2002
会议名称	Conference on Optoelectronic and Microelectronic Materials and Devices (COMMAD)
会议录名称	COMMAD 2002 PROCEEDINGS
页码	255-258
会议日期	DEC 11-13, 2002
会议地点	SYDNEY, AUSTRALIA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-7571-8
部门归属	chinese acad sci, inst semicond, sklsm, beijing 100083, peoples r china
摘要	The structural and optical properties of GaAsSb/GaAs-based quantum wells (QWs) are investigated. The interface quality of GaAsSb/GaAs/GaAsP coupled double (CD) QW structures is improved due to the strain compensation of epitaxial layers. The CD QWs possess a W-shape of energy band structure, and the optical properties display the features characteristic of a type-IQW when the GaAsSb layer thickness is thin enough.
关键词	Lasers Gain Gaas
学科领域	半导体物理
主办者	Ansto Sims Lab.; Avt Vacuum & Cryogen Serv.; Coltron Syst Pty Ltd.; Heys Technol Int Pty Ltd.; IEEE, Elect Devices Soc.; IEEE, Lasers & Electro Opt Soc.; LASTEK Pty Ltd.; Oxford Instruments Plasma Technol Pty Ltd.; PANalytical.; PHILIPS ELECT.; SCITEK AUSTRALIA Pty Ltd.; WARSASH SCI Pty Ltd.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13641
专题	中国科学院半导体研究所（2009年前）
通讯作者	Jiang DS Chinese Acad Sci Inst Semicond SKLSM Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Jiang DS,Liang XG,Chang K,et al. Optical study on the coupled GaAsSb/GaAs double quantum wells[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2002:255-258.

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