Annealing ambient controlled deep defect formation in InP

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Annealing ambient controlled deep defect formation in InP
	Zhao YW; Dong ZY; Duan ML; Sun WR; Zeng YP; Sun NF; Sun TN; Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: [email protected]
	2004
会议名称	10th International Conference on Defects - Recognition, Imaging and Physics in Semiconductors (DRIP 10)
会议录名称	EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 27 (1-3)
页码	167-169
会议日期	SEP 29-OCT 02, 2003
会议地点	Batz sur Mer, FRANCE
出版地	17, AVE DU HOGGAR, PA COURTABOEUF, BP 112, F-91944 LES ULIS CEDEX A, FRANCE
出版者	E D P SCIENCES
ISSN	1286-0042
部门归属	chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china; hebei semicond res inst, shijiazhuang 050051, hebei, peoples r china
摘要	Deep defects in annealed InP have been investigated by deep level transient capacitance spectroscopy (DLTS), photo induced current transient spectroscopy (PICTS) and thermally stimulated current spectroscopy (TSC). Both DLTS results of annealed semiconducting InP and PICTS and TSC results of annealed semi-insulating InP indicate that InP annealed in phosphorus ambient has five defects, while lid? annealed in iron phospbide ambient has two defects. Such a defect formation phenomenon is explained in terms of defect suppression by the iron atom diffusion process. The correlation of the defects and the nature of the defects in annealed InP are discussed based on the results.
关键词	Fe-doped Inp Semiinsulating Inp Point-defects Pressure Wafers Traps
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13587
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao YW Chinese Acad Sci Inst Semicond Ctr Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: [email protected]
推荐引用方式 GB/T 7714	Zhao YW,Dong ZY,Duan ML,et al. Annealing ambient controlled deep defect formation in InP[C]. 17, AVE DU HOGGAR, PA COURTABOEUF, BP 112, F-91944 LES ULIS CEDEX A, FRANCE:E D P SCIENCES,2004:167-169.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
2777.pdf（186KB）			限制开放	--	请求全文