Research on nitrogen implantation energy dependence of the properties of SIMON materials

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	Research on nitrogen implantation energy dependence of the properties of SIMON materials
	Zhang EX; Sun JY; Chen J; Chen M; Zhang ZX; Li N; Zhang GQ; Wang X; Zhang, EX, Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China. 电子邮箱地址: [email protected]
	2006
会议名称	14th International Conference on Ion Beam Modification of Materials (IBMM 2004)
会议录名称	NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
页码	242 (1-2): 585-587
会议日期	SEP 05-10, 2004
会议地点	Pacific Grove, CA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0168-583X
部门归属	chinese acad sci, ion beam lab, shanghai inst microsyst & informat technol, shanghai 20050, peoples r china; chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	With different implantation energies, nitrogen ions were implanted into SIMOX wafers in our work. And then the wafers were subsequently annealed to form separated by implantation of oxygen and nitrogen (SIMON) wafers. Secondary ion mass spectroscopy (SIMS) was used to observe the distribution of nitrogen and oxygen in the wafers. The result of electron paramagnetic resonance (EPR) was suggested by the dandling bonds densities in the wafers changed with N ions implantation energies. SIMON-based SIS capacitors were made. The results of the C-V test confirmed that the energy of nitrogen implantation affects the properties of the wafers, and the optimum implantation energy was determined. (c) 2005 Elsevier B.V. All rights reserved.
关键词	Nitrogen
学科领域	半导体器件
主办者	Amer Vacuum Soc, NE Calif Chapter.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10038
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhang, EX, Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China. 电子邮箱地址: [email protected]
推荐引用方式 GB/T 7714	Zhang EX,Sun JY,Chen J,et al. Research on nitrogen implantation energy dependence of the properties of SIMON materials[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:242 (1-2): 585-587.

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