Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells
	Hu ZH (Hu Zhihua); Liao XB (Liao Xianbo); Diao HW (Diao Hongwei); Cai Y (Cai Yi); Zhang SB (Zhang Shibin); Fortunato E (Fortunato Elvira); Martins R (Martins Rodrigo); Hu, ZH, New Univ Lisbon, Dept Mat Sci, P-2829516 Caparica, Portugal. 电子邮箱地址: [email protected]
	2006
会议名称	21st International Conference on Amorphous and Nanocrystalline Semiconductors
会议录名称	JOURNAL OF NON-CRYSTALLINE SOLIDS
页码	352 (9-20): 1900-1903
会议日期	SEP 04-09, 2005
会议地点	Lisbon, PORTUGAL
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-3093
部门归属	new univ lisbon, dept mat sci, p-2829516 caparica, portugal; new univ lisbon, cemop, uninova, fac sci & technol, p-2829516 caparica, portugal; chinese acad sci, inst semicond, beijing 100083, peoples r china; kunming inst phys, kunming, yunnan, peoples r china
摘要	A wide bandgap and highly conductive p-type hydrogenated nanocrystalline silicon (nc-Si:H) window layer was prepared with a conventional RF-PECVD system under large H dilution condition, moderate power density, high pressure and low substrate temperature. The optoelectrical and structural properties of this novel material have been investigated by Raman and UV-VIS transmission spectroscopy measurements indicating that these films are composed of nanocrystallites embedded in amorphous SiHx matrix and with a widened bandgap. The observed downshift of the optical phonon Raman spectra (514.4 cm(-1)) from crystalline Si peak (521 cm(-1)) and the widening of the bandgap indicate a quantum confinement effect from the Si nanocrystallites. By using this kind of p-layer, a-Si:H solar cells on bare stainless steel foil in nip sequence have been successfully prepared with a V c of 0.90 V, a fill factor of 0.70 and an efficiency of 9.0%, respectively. (c) 2006 Elsevier B.V. All rights reserved.
关键词	Silicon
学科领域	半导体材料
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10010
专题	中国科学院半导体研究所（2009年前）
通讯作者	Hu, ZH, New Univ Lisbon, Dept Mat Sci, P-2829516 Caparica, Portugal. 电子邮箱地址: [email protected]
推荐引用方式 GB/T 7714	Hu ZH ,Liao XB ,Diao HW ,et al. Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2006:352 (9-20): 1900-1903.

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