Electron irradiation-induced defects in InP pre-annealed at high temperature

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Electron irradiation-induced defects in InP pre-annealed at high temperature
	Zhao, YW (Zhao, Y. W.); Dong, ZY (Dong, Z. Y.); Deng, AH (Deng, A. H.); Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: [email protected]
	2006
会议名称	11th Conference on Defects Recognition Imaging and Physics in Semiconductors
会议录名称	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
页码	9 (1-3): 380-383
会议日期	SEP 13-19, 2005
会议地点	Beijing, PEOPLES R CHINA
出版地	THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND
出版者	ELSEVIER SCI LTD
ISSN	1369-8001
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china; sichuan univ, dept phys, chengdu 610065, peoples r china
摘要	Electron irradiation-induced deep level defects have been studied in InP which has undergone high-temperature annealing in phosphorus and iron phosphide ambients, respectively. In contrast to a high concentration of irradiation-induced defects in as-grown and phosphorus ambient annealed InP, InP pre-annealed in iron phosphide ambient has a very low concentration of defects. The phenomenon has been explained in terms of a faster recombination of radiation-induced defects in the annealed InP. The radiation-induced defects in the annealed InP have been compared and studied. (c) 2006 Elsevier Ltd. All rights reserved.
关键词	Indium Phosphide
学科领域	半导体材料
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10006
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: [email protected]
推荐引用方式 GB/T 7714	Zhao, YW ,Dong, ZY ,Deng, AH ,et al. Electron irradiation-induced defects in InP pre-annealed at high temperature[C]. THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND:ELSEVIER SCI LTD,2006:9 (1-3): 380-383.

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