Defect influence on luminescence efficiency of GaN-based LEDs
Li SP (Li Shuping); Fang ZL (Fang Zhilai); Chen HY (Chen Hangyang); Li JC (Li Jinchai); Chen XH (Chen Xiaohong); Yuan XL (Yuan Xiaoli); Sekiguchi T (Sekiguchi Takashi); Wang QM (Wang Qiming); Kang JY (Kang Junyong); Kang, JY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. 电子邮箱地址: [email protected]
2006
会议名称11th Conference on Defects Recognition Imaging and Physics in Semiconductors
会议录名称MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
页码9 (1-3): 371-374
会议日期SEP 13-19, 2005
会议地点Beijing, PEOPLES R CHINA
出版地THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND
出版者ELSEVIER SCI LTD
ISSN1369-8001
部门归属xiamen univ, dept phys, xiamen 361005, peoples r china; xiamen univ, semicond photon res ctr, xiamen 361005, peoples r china; natl inst mat sci, tsukuba, ibaraki, japan; chinese acad sci, inst semicond, beijing 100864, peoples r china
摘要Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposition system. The pressure and temperature were varied during growth of buffer layer in order to grow different types of epilayers. The cathodoluminescence results show that the interface distortion of quantum well plays an important role in radiant efficiency. The electroluminescence detections indicate that the dislocations also influence the external quantum efficiency by lowering the electron injection efficiency. (c) 2006 Elsevier Ltd. All rights reserved.
关键词Defects
学科领域光电子学
收录类别CPCI(ISTP)
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/10004
专题中国科学院半导体研究所(2009年前)
通讯作者Kang, JY, Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China. 电子邮箱地址: [email protected]
推荐引用方式
GB/T 7714
Li SP ,Fang ZL ,Chen HY ,et al. Defect influence on luminescence efficiency of GaN-based LEDs[C]. THE BOULEVARD, LANGFORD LANE, KIDLINGTON, OXFORD OX5 1GB, OXON, ENGLAND:ELSEVIER SCI LTD,2006:9 (1-3): 371-374.
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